Trap assisted stress induced ESD reliability of GaN schottky diodes

Bhawani Shankar; Rahul Singh; Rudrarup Sengupta; Heena Khand; Ankit Soni; Sayak Dutta Gupta; Srinivasan Raghavan; Harald Gossner; Mayank Shrivastava

Trap assisted stress induced ESD reliability of GaN schottky diodes

Bhawani Shankar
, Rahul Singh
, Rudrarup Sengupta
, Heena Khand
, Ankit Soni
, Sayak Dutta Gupta
, Srinivasan Raghavan
, Harald Gossner
, Mayank Shrivastava

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

Electro-thermal behaviour and degradation of recessed GaN Schottky diode are studied under forward and reverse ESD stress. Impact of different surface treatments at Schottky interface, on trap generation and degradation is investigated. Evolution of mechanical stress and defects is probed using onthe- fly Raman spectroscopy. Distinct failure modes are discovered in each case.

Original language	English
Title of host publication	Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2018
Publisher	ESD Association
ISBN (Electronic)	1585373028
State	Published - 25 Oct 2018
Externally published	Yes
Event	40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018 - Reno, United States Duration: 23 Sep 2018 → 28 Sep 2018

Publication series

Name	Electrical Overstress/Electrostatic Discharge Symposium Proceedings
Volume	2018-September
ISSN (Print)	0739-5159

Conference

Conference	40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018
Country/Territory	United States
City	Reno
Period	23/09/18 → 28/09/18

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Shankar, B., Singh, R., Sengupta, R., Khand, H., Soni, A., Gupta, S. D., Raghavan, S., Gossner, H., & Shrivastava, M. (2018). Trap assisted stress induced ESD reliability of GaN schottky diodes. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2018 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings; Vol. 2018-September). ESD Association.

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title = "Trap assisted stress induced ESD reliability of GaN schottky diodes",

abstract = "Electro-thermal behaviour and degradation of recessed GaN Schottky diode are studied under forward and reverse ESD stress. Impact of different surface treatments at Schottky interface, on trap generation and degradation is investigated. Evolution of mechanical stress and defects is probed using onthe- fly Raman spectroscopy. Distinct failure modes are discovered in each case.",

author = "Bhawani Shankar and Rahul Singh and Rudrarup Sengupta and Heena Khand and Ankit Soni and Gupta, \{Sayak Dutta\} and Srinivasan Raghavan and Harald Gossner and Mayank Shrivastava",

note = "Publisher Copyright: {\textcopyright} 2018 ESD Association. All rights reserved.; 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018 ; Conference date: 23-09-2018 Through 28-09-2018",

year = "2018",

month = oct,

day = "25",

language = "English",

series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",

publisher = "ESD Association",

booktitle = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2018",

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Shankar, B, Singh, R, Sengupta, R, Khand, H, Soni, A, Gupta, SD, Raghavan, S, Gossner, H & Shrivastava, M 2018, Trap assisted stress induced ESD reliability of GaN schottky diodes. in Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2018. Electrical Overstress/Electrostatic Discharge Symposium Proceedings, vol. 2018-September, ESD Association, 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018, Reno, United States, 23/09/18.

Trap assisted stress induced ESD reliability of GaN schottky diodes. / Shankar, Bhawani; Singh, Rahul; Sengupta, Rudrarup et al.
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2018. ESD Association, 2018. (Electrical Overstress/Electrostatic Discharge Symposium Proceedings; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Trap assisted stress induced ESD reliability of GaN schottky diodes

AU - Shankar, Bhawani

AU - Singh, Rahul

AU - Sengupta, Rudrarup

AU - Khand, Heena

AU - Soni, Ankit

AU - Gupta, Sayak Dutta

AU - Raghavan, Srinivasan

AU - Gossner, Harald

AU - Shrivastava, Mayank

PY - 2018/10/25

Y1 - 2018/10/25

N2 - Electro-thermal behaviour and degradation of recessed GaN Schottky diode are studied under forward and reverse ESD stress. Impact of different surface treatments at Schottky interface, on trap generation and degradation is investigated. Evolution of mechanical stress and defects is probed using onthe- fly Raman spectroscopy. Distinct failure modes are discovered in each case.

AB - Electro-thermal behaviour and degradation of recessed GaN Schottky diode are studied under forward and reverse ESD stress. Impact of different surface treatments at Schottky interface, on trap generation and degradation is investigated. Evolution of mechanical stress and defects is probed using onthe- fly Raman spectroscopy. Distinct failure modes are discovered in each case.

UR - https://www.scopus.com/pages/publications/85056814285

M3 - Conference contribution

AN - SCOPUS:85056814285

T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings

BT - Electrical Overstress/Electrostatic Discharge Symposium Proceedings, EOS/ESD 2018

PB - ESD Association

T2 - 40th Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2018

Y2 - 23 September 2018 through 28 September 2018

ER -

Trap assisted stress induced ESD reliability of GaN schottky diodes

Abstract

Publication series

Conference

ASJC Scopus subject areas

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