Two- and multi-terminal silicon light emitting devices in standard CMOS/BiCMOS IC technology

Monuko Du Plessis, Herzl Aharoni, Lukas W. Snyman

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


Although silicon is an indirect bandgap material, light emission from reverse biased pn junctions has been observed. Although the quantum efficiency is low, it will be very advantageous to utilise these devices in all-silicon optoelectronic integrated circuits (QIC's). In this paper a review of our large area display and fibre-optic devices is given, followed by new research results achieved at CEFIM with regard to low voltage two-terminal line source Si LED's. A discussion of the differences observed between avalanche and field emission LED performance is presented. The detail spectral characteristics of field emission devices, and the spectral modulation of the optical signal from field emission light emitting devices are investigated. The design and simulation of a CMOS two-colour detector is presented, to be used as a detector for spectrally modulated optical signals. Gate-controlled diode MOS-like and carrier injection BJT-like multiterminal devices are reviewed, and it is particularly indicated that both spatial modulation of the light emitting pattern and light intensity modulation can be achieved with these devices.

Original languageEnglish
Pages (from-to)2225-2233
Number of pages9
JournalPhysica Status Solidi C: Conferences
Issue number9
StatePublished - 20 Sep 2004

ASJC Scopus subject areas

  • Condensed Matter Physics


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