Abstract
The use of Kelvin force microscopy to 2D potential measurements of operating light emitting devices was demonstrated. The operating device surface band structure was imaged with nanometer resolution. Under forward applied bias, it was shown that the surface band structure is governed by absorption of the internal light emitting diode (LED) emission.
Original language | English |
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Pages (from-to) | 107-113 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 86 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 1999 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy