Ultra-thin MoS2 irradiated with highly charged ions

J. Hopster, R. Kozubek, J. Krämer, V. Sokolovsky, M. Schleberger

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Single MoS2 layers exfoliated on KBr have been irradiated with highly charged Xe ions, i.e. with Xe35+ and Xe40+. By atomic force microscopy (AFM) we identified pits and hillocks induced by single ion impacts. The latter ones appear on single layer and bulk-like MoS 2 after both irradiations, whereas their diameter and height apparently depend on the charge state q and layer number. By comparison of contact mode and tapping mode AFM measurements we deduce that these ion induced defects are topographical hillocks accompanied by an enhanced friction. In contrast to this, pit-like structures were only observed on single layer MoS2 irradiated with q = 40. Taking into account the well known ion induced pit formation on KBr due to defect mediated sputtering, we deduce that pit formation takes place in the substrate and not in the MoS2 layer.

Original languageEnglish
Pages (from-to)165-169
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume317
Issue numberPART A
DOIs
StatePublished - 15 Apr 2013
Externally publishedYes

Keywords

  • AFM
  • Highly charged ion
  • Hillocks
  • MoS
  • Nanostructures
  • Pits

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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