Ultrashallow and low-leakage p+n junction formation by plasma immersion ion implantation (PIII) and low-temperature post-implantation annealing

Kei Kanemoto, Herzl Aharoni, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

p+n junctions are fabricated by the combination of BF3 plasma immersion ion implantation (PIII) and low-temperature post-implantation annealing. Ultrashallow junctions and very low leakage currents (∼ 10-11 A at -1 V in 1 mm2 junctions) have been obtained. Despite the fact that the activation of the PIII layer is not sufficient, the I-V characteristics obtained are comparable to those of junctions formed by conventional ion implantation. By a combination of Si+ preamorphization and BF3 PIII aimed to improve the dopant activation, a maximum surface concentration of activated boron higher than 1020 cm-3 is obtained in 550°C annealing for p+n junctions with 5 nm depth. The leakage currents, however, are increased by the Si+ implantation in low-temperature post-implantation annealing.

Original languageEnglish
Pages (from-to)2706-2711
Number of pages6
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume40
Issue number4 B
DOIs
StatePublished - 1 Jan 2001

Keywords

  • Low leakage current
  • Low-temperature annealing
  • Plasma immersion ion implantation
  • Ultrashallow junction

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy

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