Abstract
p+n junctions are fabricated by the combination of BF3 plasma immersion ion implantation (PIII) and low-temperature post-implantation annealing. Ultrashallow junctions and very low leakage currents (∼ 10-11 A at -1 V in 1 mm2 junctions) have been obtained. Despite the fact that the activation of the PIII layer is not sufficient, the I-V characteristics obtained are comparable to those of junctions formed by conventional ion implantation. By a combination of Si+ preamorphization and BF3 PIII aimed to improve the dopant activation, a maximum surface concentration of activated boron higher than 1020 cm-3 is obtained in 550°C annealing for p+n junctions with 5 nm depth. The leakage currents, however, are increased by the Si+ implantation in low-temperature post-implantation annealing.
Original language | English |
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Pages (from-to) | 2706-2711 |
Number of pages | 6 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 40 |
Issue number | 4 B |
DOIs | |
State | Published - 1 Jan 2001 |
Keywords
- Low leakage current
- Low-temperature annealing
- Plasma immersion ion implantation
- Ultrashallow junction
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy