Undesirable contamination in rf sputtered α-Si layers

H. Aharoni, PL Swart

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Undesirable contamination in rf sputtered α-Si thin layers are detected by using a sensitive electron microprobe. Their presence is attributed to residual gases in the sputtering chamber. The residual contents in the chamber are identified by in situ mass spectrometry. Partial correlation is found between the gas phase residual impurities, and contamination in the solid α-Si layers.

Original languageEnglish
Pages (from-to)221-224
Number of pages4
JournalVacuum
Volume33
Issue number4
DOIs
StatePublished - 1 Jan 1983

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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