Uniaxially strained ZnO/SiO2/Si SAW resonators

S. J. Martin; R. L. Gunshor; R. F. Pierret; G. Gorodetsky

doi:10.1049/el:19820705

Uniaxially strained ZnO/SiO₂/Si SAW resonators

S. J. Martin, R. L. Gunshor, R. F. Pierret, G. Gorodetsky

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Surface-acoustic-wave (SAW) resonators fabricated on a ZnO/SiO₂/Si layered medium have been cantilever-mounted. By deflecting the free end of the substrate, uniaxial biasing strains are induced in the SAW resonator. The effect of these static strains on resonant frequency and SAW phase velocity is assessed.

Original language	English
Pages (from-to)	1030-1031
Number of pages	2
Journal	Electronics Letters
Volume	18
Issue number	24
DOIs	https://doi.org/10.1049/el:19820705
State	Published - 25 Nov 1982

Keywords

Resonators
Surface-acoustic-wave devices
Ultrasonics

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19820705

Cite this

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abstract = "Surface-acoustic-wave (SAW) resonators fabricated on a ZnO/SiO2/Si layered medium have been cantilever-mounted. By deflecting the free end of the substrate, uniaxial biasing strains are induced in the SAW resonator. The effect of these static strains on resonant frequency and SAW phase velocity is assessed.",

keywords = "Resonators, Surface-acoustic-wave devices, Ultrasonics",

author = "Martin, {S. J.} and Gunshor, {R. L.} and Pierret, {R. F.} and G. Gorodetsky",

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AU - Pierret, R. F.

AU - Gorodetsky, G.

PY - 1982/11/25

Y1 - 1982/11/25

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AB - Surface-acoustic-wave (SAW) resonators fabricated on a ZnO/SiO2/Si layered medium have been cantilever-mounted. By deflecting the free end of the substrate, uniaxial biasing strains are induced in the SAW resonator. The effect of these static strains on resonant frequency and SAW phase velocity is assessed.

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KW - Ultrasonics

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