TY - JOUR
T1 - Unraveling Exciton-Plasmon Coupling and the PIRET Mechanism in Decorated Silicon Nanowires
AU - Diwan, Aarti
AU - Yadav, Pooja
AU - Shekhawat, Abhishek S.
AU - Akila, C.
AU - Dhatchayani, M.
AU - Sharma, Rituraj
AU - Shrivastav, Anand M.
AU - Kumar, Rajesh
AU - Srivastava, Tulika
AU - Saxena, Shailendra K.
N1 - Publisher Copyright:
© 2024 American Chemical Society
PY - 2024/5/16
Y1 - 2024/5/16
N2 - Exciton-plasmon coupling is a fascinating physical phenomenon that has been investigated in various metal semiconductor systems. Intentionally chosen silicon nanowires (SiNWs) systems act as a host material for providing exciton as well as silicon oxide as a thin dielectric. A clear blue-shift in photoluminescence (PL) peak and a significant increase in visible range absorption were observed for metal nanoparticle (MNP) decorated SiNWs (D-SiNWs) which signifies the presence of exciton-plasmon coupling. A further investigation reveals that the possibility of the occurrence of the plasmon-induced resonance energy transfer (PIRET) mechanism is higher. The PL intensity enhancement in Au-decorated SiNWs is higher (∼38 times) in comparison to that in Pt due to the presence of a strong and localized electric field of plasmons near the interface of metal and semiconductors. Moreover, splitting in PL for gold-decorated SiNWs might be due to the presence of dipole-quadrupole coupling along with dipole-dipole coupling, which further increases the strength of the PIRET mechanism.
AB - Exciton-plasmon coupling is a fascinating physical phenomenon that has been investigated in various metal semiconductor systems. Intentionally chosen silicon nanowires (SiNWs) systems act as a host material for providing exciton as well as silicon oxide as a thin dielectric. A clear blue-shift in photoluminescence (PL) peak and a significant increase in visible range absorption were observed for metal nanoparticle (MNP) decorated SiNWs (D-SiNWs) which signifies the presence of exciton-plasmon coupling. A further investigation reveals that the possibility of the occurrence of the plasmon-induced resonance energy transfer (PIRET) mechanism is higher. The PL intensity enhancement in Au-decorated SiNWs is higher (∼38 times) in comparison to that in Pt due to the presence of a strong and localized electric field of plasmons near the interface of metal and semiconductors. Moreover, splitting in PL for gold-decorated SiNWs might be due to the presence of dipole-quadrupole coupling along with dipole-dipole coupling, which further increases the strength of the PIRET mechanism.
UR - http://www.scopus.com/inward/record.url?scp=85192810904&partnerID=8YFLogxK
U2 - 10.1021/acs.jpclett.4c01010
DO - 10.1021/acs.jpclett.4c01010
M3 - Article
C2 - 38713476
AN - SCOPUS:85192810904
SN - 1948-7185
VL - 15
SP - 5171
EP - 5176
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 19
ER -