Abstract
An analysis is made of the profiles of vacancies and pores formed in crystals during bulk evaporation. It is demonstrated that the dependences of the vacancy concentration n and pore radius r on the coordinate xi measured from the surface of a crystal are n varies directly as (1 plus xi / xi //0)** minus **5 and r varies directly as (1 plus xi / xi 0)** minus **2, where xi //0 is a constant. A satisfactory agreement is obtained between the published experimental results and the calculated vacancy profile.
| Original language | English |
|---|---|
| Pages (from-to) | 159-161 |
| Number of pages | 3 |
| Journal | Soviet physics. Semiconductors |
| Volume | 15 |
| Issue number | 2 |
| State | Published - 1 Jan 1981 |
ASJC Scopus subject areas
- Engineering (all)