VACANCY AND PORE PROFILES IN CRYSTALS FORMED AS A RESULT OF BULK EVAPORATION.

M. I. Sinder, V. I. Fistul'

Research output: Contribution to journalArticlepeer-review

Abstract

An analysis is made of the profiles of vacancies and pores formed in crystals during bulk evaporation. It is demonstrated that the dependences of the vacancy concentration n and pore radius r on the coordinate xi measured from the surface of a crystal are n varies directly as (1 plus xi / xi //0)** minus **5 and r varies directly as (1 plus xi / xi 0)** minus **2, where xi //0 is a constant. A satisfactory agreement is obtained between the published experimental results and the calculated vacancy profile.

Original languageEnglish
Pages (from-to)159-161
Number of pages3
JournalSoviet physics. Semiconductors
Volume15
Issue number2
StatePublished - 1 Jan 1981

Fingerprint

Dive into the research topics of 'VACANCY AND PORE PROFILES IN CRYSTALS FORMED AS A RESULT OF BULK EVAPORATION.'. Together they form a unique fingerprint.

Cite this