An analysis is made of the profiles of vacancies and pores formed in crystals during bulk evaporation. It is demonstrated that the dependences of the vacancy concentration n and pore radius r on the coordinate xi measured from the surface of a crystal are n varies directly as (1 plus xi / xi //0)** minus **5 and r varies directly as (1 plus xi / xi 0)** minus **2, where xi //0 is a constant. A satisfactory agreement is obtained between the published experimental results and the calculated vacancy profile.
|Number of pages||3|
|Journal||Soviet physics. Semiconductors|
|State||Published - 1 Jan 1981|