VACANCY POROSITY OF THE SURFACE LAYERS OF A SEMICONDUCTOR.

V. I. Fistul', M. I. Sinder

Research output: Contribution to journalArticlepeer-review

Abstract

An analysis is made of the conditions for the appearance of porosity in the surface layers of a semiconductor. It is demonstrated that a quasisteady profile of pores may form irrespective of the origin of excess vacancies near the semiconductor surface.

Original languageEnglish
Pages (from-to)680-682
Number of pages3
JournalSoviet physics. Semiconductors
Volume15
Issue number6
StatePublished - 1 Jan 1981

ASJC Scopus subject areas

  • Engineering (all)

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