An analysis is made of the conditions for the appearance of porosity in the surface layers of a semiconductor. It is demonstrated that a quasisteady profile of pores may form irrespective of the origin of excess vacancies near the semiconductor surface.
|Number of pages||3|
|Journal||Soviet physics. Semiconductors|
|State||Published - 1 Jan 1981|
ASJC Scopus subject areas
- Engineering (all)