Velocity-field relation in GaAlAs versus alloy composition

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17 Scopus citations

Abstract

High electric field transport in n-Ga1-xAlxAs semiconductor alloys for composition x range from 0.0 to 0.5 is studied theoretically. The calculations are based on a shifted Maxwellian approach for the three-valley conduction-band model. An expression for the alloy scattering probability involving no fitting parameters is used in these calculations. The calculations predict a close to linear decrease of peak velocity with an increase in the alloy composition x. The absence of the onset of negative differential mobility at x≥0.35 is found.

Original languageEnglish
Pages (from-to)7431-7434
Number of pages4
JournalJournal of Applied Physics
Volume73
Issue number11
DOIs
StatePublished - 1 Dec 1993

ASJC Scopus subject areas

  • General Physics and Astronomy

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