Abstract
High electric field transport in n-Ga1-xAlxAs semiconductor alloys for composition x range from 0.0 to 0.5 is studied theoretically. The calculations are based on a shifted Maxwellian approach for the three-valley conduction-band model. An expression for the alloy scattering probability involving no fitting parameters is used in these calculations. The calculations predict a close to linear decrease of peak velocity with an increase in the alloy composition x. The absence of the onset of negative differential mobility at x≥0.35 is found.
Original language | English |
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Pages (from-to) | 7431-7434 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 73 |
Issue number | 11 |
DOIs | |
State | Published - 1 Dec 1993 |
ASJC Scopus subject areas
- General Physics and Astronomy