Very long wavelength InxGa1-xAs/GaAs quantum well infrared photodetectors

S. D. Gunapala; K. M.S.V. Bandara; B. F. Levine; G. Sarusi; D. L. Sivco; A. Y. Cho

doi:10.1063/1.111646

Very long wavelength In_xGa_1-xAs/GaAs quantum well infrared photodetectors

S. D. Gunapala, K. M.S.V. Bandara, B. F. Levine, G. Sarusi, D. L. Sivco, A. Y. Cho

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

We demonstrate a long wavelength (λ_c=20 μm) quantum well infrared photodetector using nonlattice matched In_xGa _1-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×10¹⁰ cmHz/W at T=10 K has been achieved.

Original language	English
Pages (from-to)	2288-2290
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	17
DOIs	https://doi.org/10.1063/1.111646
State	Published - 1 Dec 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.111646

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@article{31b16282e5ac4aac8ab6b31d1a632c5c,

title = "Very long wavelength InxGa1-xAs/GaAs quantum well infrared photodetectors",

abstract = "We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa 1-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cmHz/W at T=10 K has been achieved.",

author = "Gunapala, {S. D.} and Bandara, {K. M.S.V.} and Levine, {B. F.} and G. Sarusi and Sivco, {D. L.} and Cho, {A. Y.}",

year = "1994",

month = dec,

day = "1",

doi = "10.1063/1.111646",

language = "English",

volume = "64",

pages = "2288--2290",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Very long wavelength InxGa1-xAs/GaAs quantum well infrared photodetectors

AU - Gunapala, S. D.

AU - Bandara, K. M.S.V.

AU - Levine, B. F.

AU - Sarusi, G.

AU - Sivco, D. L.

AU - Cho, A. Y.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa 1-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cmHz/W at T=10 K has been achieved.

AB - We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa 1-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cmHz/W at T=10 K has been achieved.

UR - http://www.scopus.com/inward/record.url?scp=0028410473&partnerID=8YFLogxK

U2 - 10.1063/1.111646

DO - 10.1063/1.111646

M3 - Article

AN - SCOPUS:0028410473

SN - 0003-6951

VL - 64

SP - 2288

EP - 2290

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Very long wavelength In_xGa_1-xAs/GaAs quantum well infrared photodetectors

Abstract

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