We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa 1-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cmHz/W at T=10 K has been achieved.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1 Dec 1994|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)