Very long wavelength InxGa1-xAs/GaAs quantum well infrared photodetectors

S. D. Gunapala, K. M.S.V. Bandara, B. F. Levine, G. Sarusi, D. L. Sivco, A. Y. Cho

Research output: Contribution to journalArticlepeer-review

47 Scopus citations


We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa 1-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cmHz/W at T=10 K has been achieved.

Original languageEnglish
Pages (from-to)2288-2290
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - 1 Dec 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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