Very long wavelength InxGa1-xAs/GaAs quantum well infrared photodetectors

S. D. Gunapala; K. M.S.V. Bandara; B. F. Levine; G. Sarusi; D. L. Sivco; A. Y. Cho

doi:10.1063/1.111646

Very long wavelength In_xGa_1-xAs/GaAs quantum well infrared photodetectors

S. D. Gunapala
, K. M.S.V. Bandara
, B. F. Levine
, G. Sarusi
, D. L. Sivco
, A. Y. Cho

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

We demonstrate a long wavelength (λ_c=20 μm) quantum well infrared photodetector using nonlattice matched In_xGa _1-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×10¹⁰ cmHz/W at T=10 K has been achieved.

Original language	English
Pages (from-to)	2288-2290
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	17
DOIs	https://doi.org/10.1063/1.111646
State	Published - 1 Dec 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.111646

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title = "Very long wavelength InxGa1-xAs/GaAs quantum well infrared photodetectors",

abstract = "We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa 1-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cmHz/W at T=10 K has been achieved.",

author = "Gunapala, \{S. D.\} and Bandara, \{K. M.S.V.\} and Levine, \{B. F.\} and G. Sarusi and Sivco, \{D. L.\} and Cho, \{A. Y.\}",

year = "1994",

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doi = "10.1063/1.111646",

language = "English",

volume = "64",

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T1 - Very long wavelength InxGa1-xAs/GaAs quantum well infrared photodetectors

AU - Gunapala, S. D.

AU - Bandara, K. M.S.V.

AU - Levine, B. F.

AU - Sarusi, G.

AU - Sivco, D. L.

AU - Cho, A. Y.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa 1-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cmHz/W at T=10 K has been achieved.

AB - We demonstrate a long wavelength (λc=20 μm) quantum well infrared photodetector using nonlattice matched InxGa 1-xAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system. A detectivity of D*=9.7×1010 cmHz/W at T=10 K has been achieved.

UR - https://www.scopus.com/pages/publications/0028410473

U2 - 10.1063/1.111646

DO - 10.1063/1.111646

M3 - Article

AN - SCOPUS:0028410473

SN - 0003-6951

VL - 64

SP - 2288

EP - 2290

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Very long wavelength In_xGa_1-xAs/GaAs quantum well infrared photodetectors

Abstract

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