Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation

Andrey V. Emelyanov, Andrey G. Kazanskii, Mark V. Khenkin, Pavel A. Forsh, Pavel K. Kashkarov, Mindaugas Gecevicius, Martynas Beresna, Peter G. Kazansky

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

Visible luminescence is observed from the composite of SiO 2 with embedded silicon nanocrystallites produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the defect states at the interface between silicon crystallites and SiO 2 matrix. The method could be used for fabrication of luminescent layers to increase energy conversion of a-Si:H solar cells.

Original languageEnglish
Article number081902
JournalApplied Physics Letters
Volume101
Issue number8
DOIs
StatePublished - 20 Aug 2012
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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