Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation

  • Andrey V. Emelyanov
  • , Andrey G. Kazanskii
  • , Mark V. Khenkin
  • , Pavel A. Forsh
  • , Pavel K. Kashkarov
  • , Mindaugas Gecevicius
  • , Martynas Beresna
  • , Peter G. Kazansky

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Visible luminescence is observed from the composite of SiO 2 with embedded silicon nanocrystallites produced by femtosecond laser irradiation of hydrogenated amorphous silicon (a-Si:H) film in air. The photoluminescence originates from the defect states at the interface between silicon crystallites and SiO 2 matrix. The method could be used for fabrication of luminescent layers to increase energy conversion of a-Si:H solar cells.

Original languageEnglish
Article number081902
JournalApplied Physics Letters
Volume101
Issue number8
DOIs
StatePublished - 20 Aug 2012
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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