Voltage tunability of high performance Zn doped p-type QWIP grown by MOVPE

Y. Paltiel; A. Zussman; N. Snapi; A. Sher; G. Jung; K. Cohen; E. Benory; E. Weiss

doi:10.1016/j.infrared.2005.02.009

Voltage tunability of high performance Zn doped p-type QWIP grown by MOVPE

Y. Paltiel, A. Zussman, N. Snapi, A. Sher, G. Jung, K. Cohen, E. Benory, E. Weiss

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report high performance long wavelength Zn doped p-type QWIPs grown by MOVPE. The p-QWIP detectors were tested under normal incident illumination. The detectors demonstrated high performance, in contrast to previous reports on Zn doped p-QWIP. At 80 K, a bias of 2 V and a peak wavelength of 8.2 μm, a D* = 0.97 × 10¹⁰ cm Hz^0.5/W was measured. The device exhibited a spectral electric field tunability of 2.7 μm. The photoluminescence spectra of the GaAs bulk and p-type GaAs well of the p-QWIP layer structure, were studied vs temperature and longitudinal electric field. The results of the photoluminescence spectra were correlated with the voltage tunability of the spectral response of the p-QWIP.

Original language	English
Pages (from-to)	37-42
Number of pages	6
Journal	Infrared Physics and Technology
Volume	47
Issue number	1-2
DOIs	https://doi.org/10.1016/j.infrared.2005.02.009
State	Published - 1 Oct 2005

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.infrared.2005.02.009

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@article{7edd346e356249f396900eca23e8806f,

title = "Voltage tunability of high performance Zn doped p-type QWIP grown by MOVPE",

abstract = "We report high performance long wavelength Zn doped p-type QWIPs grown by MOVPE. The p-QWIP detectors were tested under normal incident illumination. The detectors demonstrated high performance, in contrast to previous reports on Zn doped p-QWIP. At 80 K, a bias of 2 V and a peak wavelength of 8.2 μm, a D* = 0.97 × 1010 cm Hz0.5/W was measured. The device exhibited a spectral electric field tunability of 2.7 μm. The photoluminescence spectra of the GaAs bulk and p-type GaAs well of the p-QWIP layer structure, were studied vs temperature and longitudinal electric field. The results of the photoluminescence spectra were correlated with the voltage tunability of the spectral response of the p-QWIP.",

author = "Y. Paltiel and A. Zussman and N. Snapi and A. Sher and G. Jung and K. Cohen and E. Benory and E. Weiss",

year = "2005",

month = oct,

day = "1",

doi = "10.1016/j.infrared.2005.02.009",

language = "English",

volume = "47",

pages = "37--42",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Voltage tunability of high performance Zn doped p-type QWIP grown by MOVPE

AU - Paltiel, Y.

AU - Zussman, A.

AU - Snapi, N.

AU - Sher, A.

AU - Jung, G.

AU - Cohen, K.

AU - Benory, E.

AU - Weiss, E.

PY - 2005/10/1

Y1 - 2005/10/1

N2 - We report high performance long wavelength Zn doped p-type QWIPs grown by MOVPE. The p-QWIP detectors were tested under normal incident illumination. The detectors demonstrated high performance, in contrast to previous reports on Zn doped p-QWIP. At 80 K, a bias of 2 V and a peak wavelength of 8.2 μm, a D* = 0.97 × 1010 cm Hz0.5/W was measured. The device exhibited a spectral electric field tunability of 2.7 μm. The photoluminescence spectra of the GaAs bulk and p-type GaAs well of the p-QWIP layer structure, were studied vs temperature and longitudinal electric field. The results of the photoluminescence spectra were correlated with the voltage tunability of the spectral response of the p-QWIP.

AB - We report high performance long wavelength Zn doped p-type QWIPs grown by MOVPE. The p-QWIP detectors were tested under normal incident illumination. The detectors demonstrated high performance, in contrast to previous reports on Zn doped p-QWIP. At 80 K, a bias of 2 V and a peak wavelength of 8.2 μm, a D* = 0.97 × 1010 cm Hz0.5/W was measured. The device exhibited a spectral electric field tunability of 2.7 μm. The photoluminescence spectra of the GaAs bulk and p-type GaAs well of the p-QWIP layer structure, were studied vs temperature and longitudinal electric field. The results of the photoluminescence spectra were correlated with the voltage tunability of the spectral response of the p-QWIP.

UR - http://www.scopus.com/inward/record.url?scp=24344497291&partnerID=8YFLogxK

U2 - 10.1016/j.infrared.2005.02.009

DO - 10.1016/j.infrared.2005.02.009

M3 - Article

AN - SCOPUS:24344497291

SN - 1350-4495

VL - 47

SP - 37

EP - 42

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

IS - 1-2

ER -

Voltage tunability of high performance Zn doped p-type QWIP grown by MOVPE

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