TY - JOUR
T1 - Water activated doping and transport in multilayered germanane crystals
AU - Young, Justin R.
AU - Chitara, Basant
AU - Cultrara, Nicholas D.
AU - Arguilla, Maxx Q.
AU - Jiang, Shishi
AU - Fan, Fan
AU - Johnston-Halperin, Ezekiel
AU - Goldberger, Joshua E.
N1 - Funding Information:
Primary support for this work, especially electrical characterization and modeling comes from the Center for Emergent Materials at Ohio State University, an NSF MRSEC center (Grant DMR-1420451). Partial support for materials synthesis comes from the Army Research Office (Grant W911-NF-12-1-0481).
Publisher Copyright:
© 2016 IOP Publishing Ltd.
PY - 2016/1/27
Y1 - 2016/1/27
N2 - The synthesis of germanane (GeH) has opened the door for covalently functionalizable 2D materials in electronics. Herein, we demonstrate that GeH can be electronically doped by incorporating stoichiometric equivalents of phosphorus dopant atoms into the CaGe 2 precursor. The electronic properties of these doped materials show significant atmospheric sensitivity, and we observe a reduction in resistance by up to three orders of magnitude when doped samples are measured in water-containing atmospheres. This variation in resistance is a result of water activation of the phosphorus dopants. Transport measurements in different contact geometries show a significant anisotropy between in-plane and out-of-plane resistances, with a much larger out-of-plane resistance. These measurements along with finite element modeling results predict that the current distribution in top-contacted crystals is restricted to only the topmost, water activated crystal layers. Taken together, these results pave the way for future electronic and optoelectronic applications utilizing group IV graphane analogues.
AB - The synthesis of germanane (GeH) has opened the door for covalently functionalizable 2D materials in electronics. Herein, we demonstrate that GeH can be electronically doped by incorporating stoichiometric equivalents of phosphorus dopant atoms into the CaGe 2 precursor. The electronic properties of these doped materials show significant atmospheric sensitivity, and we observe a reduction in resistance by up to three orders of magnitude when doped samples are measured in water-containing atmospheres. This variation in resistance is a result of water activation of the phosphorus dopants. Transport measurements in different contact geometries show a significant anisotropy between in-plane and out-of-plane resistances, with a much larger out-of-plane resistance. These measurements along with finite element modeling results predict that the current distribution in top-contacted crystals is restricted to only the topmost, water activated crystal layers. Taken together, these results pave the way for future electronic and optoelectronic applications utilizing group IV graphane analogues.
KW - 2D materials
KW - electronic transport
KW - germanane
KW - graphane analogues
UR - http://www.scopus.com/inward/record.url?scp=84953883001&partnerID=8YFLogxK
U2 - 10.1088/0953-8984/28/3/034001
DO - 10.1088/0953-8984/28/3/034001
M3 - Article
AN - SCOPUS:84953883001
SN - 0953-8984
VL - 28
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
IS - 3
M1 - 034001
ER -