@article{219a175901754c2d826a38972e26ae23,
title = "Wide intrascene dynamic range cmos aps using dual sampling",
abstract = "A CMOS active pixel sensor that achieves wide intrascene dynamic range using dual sampling is reported. A 64 × 64 element prototype sensor with dual output architecture was fabricated using a 1.2-μm n-well CMOS process with 20.4-μm pitch photodiode-type active pixels. The sensor achieves an intrascene dynamic range of 109 dB without nonlinear companding.",
author = "Orly Yadid-Pecht and Fossum, {Eric R.}",
note = "Funding Information: Manuscript received October 14, 1996; revised April 16, 1997. The review of this paper was arranged by Editor C. V. Stancampiano. The research described in this paper was performed by the Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, and was jointly sponsored by the Defense Advanced Research Projects Agency, Electronic Systems Technology Office, and the National Aeronautics and Space Administration, Office of Space Access and Technology.",
year = "1997",
month = dec,
day = "1",
doi = "10.1109/16.628828",
language = "English",
volume = "44",
pages = "1721--1723",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers",
number = "10",
}