X-ray characterization of LPOMVPE grown AlAs/GaAs multilayer

D. Mogilyanski; M. Blumin; E. Gartstein; R. Opitz; R. Kohler

doi:10.4028/www.scientific.net/msf.321-324.445

X-ray characterization of LPOMVPE grown AlAs/GaAs multilayer

D. Mogilyanski, M. Blumin, E. Gartstein, R. Opitz, R. Kohler

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

X-ray techniques were used for characterization of the AlAs\GaAs multilayer grown on GaAs vicinal substrate. The structural parameters like the thickness of the layers, surface and interface roughnesses were derived from specular reflectivity. The verification of layers thicknesses was obtained from high angle θ:2θ scan after introduction of the correction due to the miscut of the substrate. The comparison of the experimental two-dimensional intensity distribution with the simulated one is based on the mosaic defective model of the multilayer.

Original language	English
Pages (from-to)	445-450
Number of pages	6
Journal	Materials Science Forum
Volume	321-324 I
DOIs	https://doi.org/10.4028/www.scientific.net/msf.321-324.445
State	Published - 1 Jan 2000

Keywords

AlAs/GaAs Superlattice
Specular Reflectivity and High Resolution Intensity Mapping
Vicinal Substrate
X-Ray Diffraction

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/msf.321-324.445

Cite this

@article{b1dde43b3365402682b39282f7966196,

title = "X-ray characterization of LPOMVPE grown AlAs/GaAs multilayer",

abstract = "X-ray techniques were used for characterization of the AlAs\GaAs multilayer grown on GaAs vicinal substrate. The structural parameters like the thickness of the layers, surface and interface roughnesses were derived from specular reflectivity. The verification of layers thicknesses was obtained from high angle θ:2θ scan after introduction of the correction due to the miscut of the substrate. The comparison of the experimental two-dimensional intensity distribution with the simulated one is based on the mosaic defective model of the multilayer.",

keywords = "AlAs/GaAs Superlattice, Specular Reflectivity and High Resolution Intensity Mapping, Vicinal Substrate, X-Ray Diffraction",

author = "D. Mogilyanski and M. Blumin and E. Gartstein and R. Opitz and R. Kohler",

year = "2000",

month = jan,

day = "1",

doi = "10.4028/www.scientific.net/msf.321-324.445",

language = "English",

volume = "321-324 I",

pages = "445--450",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

}

TY - JOUR

T1 - X-ray characterization of LPOMVPE grown AlAs/GaAs multilayer

AU - Mogilyanski, D.

AU - Blumin, M.

AU - Gartstein, E.

AU - Opitz, R.

AU - Kohler, R.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - X-ray techniques were used for characterization of the AlAs\GaAs multilayer grown on GaAs vicinal substrate. The structural parameters like the thickness of the layers, surface and interface roughnesses were derived from specular reflectivity. The verification of layers thicknesses was obtained from high angle θ:2θ scan after introduction of the correction due to the miscut of the substrate. The comparison of the experimental two-dimensional intensity distribution with the simulated one is based on the mosaic defective model of the multilayer.

AB - X-ray techniques were used for characterization of the AlAs\GaAs multilayer grown on GaAs vicinal substrate. The structural parameters like the thickness of the layers, surface and interface roughnesses were derived from specular reflectivity. The verification of layers thicknesses was obtained from high angle θ:2θ scan after introduction of the correction due to the miscut of the substrate. The comparison of the experimental two-dimensional intensity distribution with the simulated one is based on the mosaic defective model of the multilayer.

KW - AlAs/GaAs Superlattice

KW - Specular Reflectivity and High Resolution Intensity Mapping

KW - Vicinal Substrate

KW - X-Ray Diffraction

UR - http://www.scopus.com/inward/record.url?scp=0033900278&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/msf.321-324.445

DO - 10.4028/www.scientific.net/msf.321-324.445

M3 - Article

AN - SCOPUS:0033900278

SN - 0255-5476

VL - 321-324 I

SP - 445

EP - 450

JO - Materials Science Forum

JF - Materials Science Forum

ER -

X-ray characterization of LPOMVPE grown AlAs/GaAs multilayer

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this