Liquid Phase Epitaxy (LPE) layers were doped during growth. The growthmethod was horizontal sliding in semiclosed hydrogen atmosphere. Thedopants were copper for p-type layers and gallium for n-type layers.TheTwo Carrier Model was employed to analyse the results. By this analysis,hole concentration and mobility and electron concentration and mobilitywere obtained. The transmission infrared spectrum of these layers wasexamined in the range of 2 to 25 microns. It was demonstrated that thecontrol of the type and carrier concentration can be achieved by dopingduring growth. Possible application of this work is the ability ofproduction of p-n heterojunctions during growth. The effect of shift inlambdaco to short wavelengths by Burstein Shift can be used as intrinsicinfra-red windows. The strong dependence of reflection on wavelengthsand carrier concentration demonstrated in this work, can be used indevelopment of infrared waveguides.
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